Berlin.Industrial.Group. (B.I.G.)

Designer

• Simulation and design of epitaxial structures (heterostructures) for III/V semiconductor laser diodes in the mid-infrared (MIR) range (GaAs-, InP- or GaSb-based systems)
• Development and optimization of quantum wells, barriers, waveguides and doping profiles with a particular focus on brightness, efficiency and reliability
• Use and further development of simulation and design software (e.g., HAROLD, LUMERICAL, APSYS, MATLAB or comparable tools), including development of custom models where applicable
• Conceptualization, simulation and further development of chip and heterostructure designs for III/V semiconductor laser diodes based on physical models (band structure, carrier dynamics, recombination mechanisms, thermal management)
• Analysis of the physical relationships between the epitaxial structure and the optoelectronic properties of the devices
• Validation of simulation results through close collaboration with process development and manufacturing
• Independent planning, execution and development of experiments for analysis (LIV measurements — CW/pulsed, near- and far-field measurements, etc.), and use of characterization methods such as PL, XRD, TEM, SIMS or TLM
• Collaboration with process development and manufacturing to transfer new chip and epitaxy concepts into series production
• Opportunity to help shape and publish scientific results in both internal and external professional forums

Development Engineer – Simulation & Design for III/V Laser Diodes