Berlin.Industrial.Group. (B.I.G.)

Development Engineer – Simulation & Design for III/V Laser Diodes

Berlin.Industrial.Group. (B.I.G.)

full-time

Posted on:

Location Type: Office

Location: Berlin • Germany

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Job Level

Junior

About the role

  • Simulation and design of epitaxial structures (heterostructures) for III/V semiconductor laser diodes in the mid-infrared (MIR) range (GaAs-, InP- or GaSb-based systems)
  • Development and optimization of quantum wells, barriers, waveguides and doping profiles with a particular focus on brightness, efficiency and reliability
  • Use and further development of simulation and design software (e.g., HAROLD, LUMERICAL, APSYS, MATLAB or comparable tools), including development of custom models where applicable
  • Conceptualization, simulation and further development of chip and heterostructure designs for III/V semiconductor laser diodes based on physical models (band structure, carrier dynamics, recombination mechanisms, thermal management)
  • Analysis of the physical relationships between the epitaxial structure and the optoelectronic properties of the devices
  • Validation of simulation results through close collaboration with process development and manufacturing
  • Independent planning, execution and development of experiments for analysis (LIV measurements — CW/pulsed, near- and far-field measurements, etc.), and use of characterization methods such as PL, XRD, TEM, SIMS or TLM
  • Collaboration with process development and manufacturing to transfer new chip and epitaxy concepts into series production
  • Opportunity to help shape and publish scientific results in both internal and external professional forums

Requirements

  • University degree (Diploma, Master's or PhD) in Physics, Electrical Engineering, Materials Science or a related field with a focus on semiconductor devices
  • Solid knowledge in the simulation and development of heterostructures for III/V semiconductors (band structures, transport mechanisms, quantum wells/wires, non-radiative mechanisms)
  • Proven experience in designing III/V laser diodes, ideally in the wavelength regions relevant to us
  • Confident handling of device simulation tools or willingness to develop custom physical models/tools
  • Basic understanding of epitaxial processes and their influence on device design is helpful but not a primary part of the role
  • Enjoy analytical work, problem solving and interdisciplinary collaboration
  • Very good German and English skills, both written and spoken.
Benefits
  • 30 days of vacation per year to support a healthy work–life balance
  • A varied and challenging role with many opportunities to shape your work at a modern location
  • Flat hierarchies and short decision-making processes with plenty of scope for personal responsibility
  • Flexible working hours
  • Regular cross-team knowledge transfer
  • Numerous additional benefits such as employee and retail discounts, on-site cafeteria, sports facilities (e.g., volleyball court, private fitness room), bike leasing and regular company events
Applicant Tracking System Keywords

Tip: use these terms in your resume and cover letter to boost ATS matches.

Hard Skills & Tools
simulation of epitaxial structuresdesign of heterostructuresdevelopment of quantum wellsoptimization of doping profilesanalysis of optoelectronic propertiesLIV measurementscharacterization methodsdevice simulationdesigning III/V laser diodesunderstanding of epitaxial processes
Soft Skills
analytical workproblem solvinginterdisciplinary collaboration
Certifications
University degree in PhysicsUniversity degree in Electrical EngineeringUniversity degree in Materials Science