Fraunhofer-Gesellschaft

Research Associate – Design and Simulation of GaN Devices

Fraunhofer-Gesellschaft

full-time

Posted on:

Location Type: Office

Location: Itzehoe • Germany

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About the role

  • Conceptualization and design of innovative GaN-based devices using commercial and open-source EDA software
  • Conceptualization of control measurements for the in-line characterization of novel devices during production
  • Simulation and calibration of processes and device properties using TCAD
  • Supervision of students during the design and simulation of building elements
  • Independent processing of work packages within forward-looking research projects with various internal and external actors from industry and research
  • Documentation and communication of the results internally as well as to customers and capitalization of the results through publications and patents

Requirements

  • Completed scientific university degree (Master's/Diploma/Doctorate) in physics, electrical engineering, materials science, or a comparable discipline
  • Knowledge of semiconductor manufacturing technologies and processes, preferably GaN-specific
  • Knowledge of device development and process and device simulation (TCAD)
  • Advantageous: Experience in the (materials science) characterization of semiconductor processes and devices
  • Proficiency in written and spoken English and German
  • A high degree of independence, initiative and commitment
  • The ability to quickly familiarize yourself with new challenges and to thrive while taking on responsibility in a team environment
Benefits
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Applicant Tracking System Keywords

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Hard Skills & Tools
GaN-based devicesEDA softwarecontrol measurementsTCADsemiconductor manufacturing technologiesdevice developmentprocess simulationdevice simulationmaterials science characterization
Soft Skills
independenceinitiativecommitmentability to familiarize with new challengesresponsibilityteam environment
Certifications
Master's degreeDiplomaDoctorate