Berlin.Industrial.Group. (B.I.G.)

Development Engineer Simulation & Design – III/V Laser Diodes

Berlin.Industrial.Group. (B.I.G.)

full-time

Posted on:

Location Type: Office

Location: Berlin • Germany

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About the role

  • Simulation and design of epitaxial structures (heterostructures) for III/V semiconductor laser diodes in the mid-infrared (MIR) range (GaAs-, InP- or GaSb-based systems)
  • Development and optimization of quantum wells/films, barriers, waveguides and doping profiles with particular focus on brightness, efficiency and reliability
  • Use and further development of simulation and design software (e.g. HAROLD, LUMERICAL, APSYS, MATLAB or comparable tools), including the development of in-house models where applicable
  • Design, simulation and further development of chip and heterostructure designs for III/V semiconductor laser diodes based on physical models (band structure, carrier dynamics, recombination mechanisms, thermal management)
  • Analysis of the physical relationships between epitaxial structure and the optoelectronic properties of the devices
  • Validation of simulation results through close collaboration with process development and production
  • Independent planning, execution and development of experiments for analysis (LIV measurements – cw/pulsed, near- and far-field measurements, etc.), and use of characterization methods such as PL, XRD, TEM, SIMS or TLM
  • Collaboration with process development and production to transfer new chip and epitaxy concepts into series production
  • Opportunity to contribute to and publish scientific results in internal and external specialist forums

Requirements

  • University degree (Diploma, Master's or PhD) in Physics, Electrical Engineering, Materials Science or a related field with a focus on semiconductor devices
  • Solid knowledge in the simulation and development of heterostructures for III/V semiconductors (band structures, transport mechanisms, quantum wells/wires, non-radiative mechanisms)
  • Proven experience in the design of III/V laser diodes, ideally in the wavelength regions relevant to us
  • Confident use of device simulation tools or willingness to develop own physical models/tools
  • Basic understanding of epitaxial processes and their influence on device design is helpful but not a primary requirement for the role
  • Enjoy analytical work, problem solving and interdisciplinary collaboration
  • Very good written and spoken German and English
Benefits
  • 30 days of vacation per year to maintain your work–life balance
  • A highly varied and challenging role with plenty of scope for shaping your work at a modern site
  • Flat hierarchies and short decision-making paths with lots of responsibility
  • Flexible working hours
  • Regular cross-team knowledge transfer
  • Numerous additional benefits such as employee and shopping discounts, on-site canteen, sports facilities (e.g. volleyball court, on-site gym), bike leasing and regular company events

Applicant Tracking System Keywords

Tip: use these terms in your resume and cover letter to boost ATS matches.

Hard skills
simulation of epitaxial structuresdesign of heterostructuresdevelopment of quantum wellsoptimization of doping profilesanalysis of optoelectronic propertiesLIV measurementscharacterization methodsdesign of III/V laser diodesdevelopment of physical modelsunderstanding of transport mechanisms
Soft skills
analytical workproblem solvinginterdisciplinary collaboration
Certifications
University degree in PhysicsUniversity degree in Electrical EngineeringUniversity degree in Materials Science